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HAOHAI |
N-Channel MOSFET ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A2SHB Case Material: Molded Plastic. UL Flammability Classification Rat |
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Bruckewell |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● P |
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Toshiba |
N-Channel MOSFET nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design th |
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Low Power Semi |
N-Channel MOSFET ■ 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V ■ 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V ■ Super high density cell design for extremely low RDS(ON) ■ SOT23 Package Applications Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor W |
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H&M Semiconductor |
P-Channel Trench Power MOSFET ● VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment Application |
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Toshiba |
Silicon N-Channel IGBT (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low |
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Toshiba |
N-CHANNEL JUNCTION TYPE Field Effect Transistor Hz Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss VDG = 10 V, ID = 0, f = 1 MHz Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA Min Typ. Max Unit ¾ ¾ -1.0 nA -50 ¾ ¾ V 1.2 ¾ 14 mA -0.7 ¾ -6.0 V 1.5 ¾ ¾ mS ¾ 9.0 ¾ pF ¾ 2.5 |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10A60W |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET .g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, |
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SLS SEMICONDUCTOR |
N-Channel MOSFET 1、 ； 2、 ； /Applications： DC-DC 。 /Absolute maximum ratings(Ta=25℃) /Parameter -/Drain-Source Voltage -/Gate-Source Voltage （）/Continuous Drain Current /Power Dissipation / Thermal Resistance Junction to Ambient /Junction Temperature /Storage Tem |
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Toshiba |
Silicon N Channel MOS Type Field Effect Transistor istance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.78 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 |
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Toshiba |
N-Channel MOSFET y under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper |
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Toshiba |
Silicon N-Channel MOSFET f high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W |
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Vishay |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficient PWM Optimized • 100 % UIS and Rg Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 |
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Toshiba |
Silicon N-Channel MOSFET heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cu |
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Toshiba Semiconductor |
(2SK2545) N-Channel MOSFET usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET /voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. |
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Toshiba Semiconductor |
Silicon N-Channel MOS Type FET ure/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maxim |
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Desde 2024. D4U Semiconductor.
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