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A2SHB |
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| Part Number | A2SHB |
| Manufacturer | HAOHAI |
| Description | 3.7A, 20V N N N-Channel Enhancement Mode Field Effect Transistor SMD Features ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Le... |
| Features |
■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A2SHB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB（SOT-23） D HNM2302ALB N-Channel MOSFETs HNM2302ALB N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GMS2302 （） G S SOT-23 S G SOT-23 DEVICE MARKING: A2SHB ■ MAXIMUM RATINGS Characteristic Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Cu... |
| Document |
 A2SHB Data Sheet
PDF 272.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | A2SHB |
SLS SEMICONDUCTOR |
N-Channel MOSFET |
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| 2 | A2SHB |
Low Power Semi |
N-Channel MOSFET |
|
| 3 | A2SHB |
YUSHIN |
SOT-23 FET |
|
| 4 | A2S56D20CTP |
Powerchip Semiconductor |
256Mb DDR SDRAM |
|
| 5 | A2S56D30CTP |
Powerchip Semiconductor |
256Mb DDR SDRAM |
|
| 6 | A2S56D40CTP |
Powerchip Semiconductor |
256Mb DDR SDRAM |
|
| 7 | A2SI |
Zentrum Mikroelektronik Dresden |
Release Notes IC Revision C |
|
| 8 | A2SI-E |
Zentrum Mikroelektronik Dresden |
Advanced AS-Interface IC |
|
| 9 | A2SI-L |
Zentrum Mikroelektronik Dresden |
Low End Device AS-Interface IC |
|
| 10 | A20 |
Allwinner Technology |
Processor |
|
Desde 2024. D4U Semiconductor.
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