K8A60DA |
Part Number | K8A60DA |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward tra... |
Features |
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to a... |
Document |
K8A60DA Data Sheet
PDF 191.28KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K8A65D |
Toshiba Semiconductor |
TK8A65D | |
2 | K8A1215EBC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
3 | K8A1215ETC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
4 | K8A1215EZC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
5 | K8A1315EBC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
6 | K8A1315ETC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
7 | K8A1315EZC |
Samsung semiconductor |
512Mb C-die NOR FLASH | |
8 | K8A50D |
Toshiba |
Silicon N-Channel MOSFET | |
9 | K8A55DA |
Toshiba |
TK8A55DA | |
10 | K8A5615EBA |
Samsung Electronics |
Flash Memory |