Microsemi Corporation MSA Hoja de datos

No.	parte #	Fabricante	Descripción
1	MSAFX75N10A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity a
2	MSAEZ33N20A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanc
3	MSAEZ50N10A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanc
4	MSAFA1N100D	Microsemi Corporation	Fast MOSFET Die • • • • • • • MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @ T C =
5	MSAFA1N100P3	Microsemi Corporation	MOSFET Device • • • • • • • • Low On-State resistance Avalanche and Surge Rated High Frequency Switching Ultra low Leakage Current UIS rated Available with Lot Acceptance Testing “L” Suffix Available with “J” leads 1 Amp 1000 V N-Channel enhancement mode high den
6	MSAFA75N10C	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ultrafast body diode Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Very low package inductance Very low thermal resistance Reverse polarity available upon request W W W . Microsemi . COM A
7	MSAFR12N50A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanc
8	MSAFR30N20A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanc
9	MSAER30N20A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanc
10	MSAFX10N90A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance • Very low thermal resistance • Reverse polarity av
11	MSAFX11P50A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • • High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low pa
12	MSAFX20N60A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity a
13	MSAFX24N50A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity a
14	MSAFX40N30A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity a
15	MSAFX50N20A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity a
16	MSAFX76N07A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity a
17	MSAFZ33N20A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanc
18	MSAFZ50N10A	Microsemi Corporation	N-CHANNEL ENHANCEMENT MODE POWER MOSFET • • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanc
19	MSAGA11F120D	Microsemi Corporation	Fast IGBT Die • • • • • Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated • Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max
20	MSAGX60F60A	Microsemi Corporation	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)