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MSAFX10N90A |
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| Part Number | MSAFX10N90A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX. 900 900 +/-20 +/-30 10 6 40 10 3... |
| Features |
• • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance • Very low thermal resistance • Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX. 900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.25 UNIT Volts Vo... |
| Document |
 MSAFX10N90A Data Sheet
PDF 71.37KB |
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Desde 2024. D4U Semiconductor.
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