Busque con el número de pieza junto con el fabricante o la descripción
MSAFX50N20A |
Click to view a larger image
| Part Number | MSAFX50N20A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 50 40 200 50 30 tbd... |
| Features |
• • • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 50 40 200 50 30 tbd 5.0 300 -55 to +150 -55 to +150 50 200 0.25 UNIT Volts Volts... |
| Document |
 MSAFX50N20A Data Sheet
PDF 68.21KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MSAFX10N90A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | MSAFX11P50A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | MSAFX20N60A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | MSAFX24N50A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | MSAFX40N30A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | MSAFX75N10A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
|