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MSAFX20N60A |
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| Part Number | MSAFX20N60A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 600 600 +/-20 +/-30 20 15 80 20 30 tbd ... |
| Features |
• • • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 600 600 +/-20 +/-30 20 15 80 20 30 tbd 5.0 300 -55 to +150 -55 to +150 20 80 0.25 UNIT Volts Volts V... |
| Document |
 MSAFX20N60A Data Sheet
PDF 68.18KB |
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Desde 2024. D4U Semiconductor.
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