Microsemi 2N3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N3821	Microsemi Corporation	N-CHANNEL J-FET .0 4.0 0.5 1.0 1.0 2.5 10 20 2.0 4.0 7.5 4.0 6.0 8.0 IDSS mA Gate-Source Voltage VDS = 15 Vdc, ID = 50 µAdc VDS = 15 Vdc, ID = 200 µAdc VDS = 15 Vdc, ID = 400 µAdc Gate-Source Cutoff Voltage VDS = 15 Vdc, ID = 0.5 ηAdc VGS Vdc VGS(off) Vdc 6
2	2N3019	Microsemi	LOW POWER NPN SILICON TRANSISTOR
3	2N3032	Microsemi Corporation	SCRs
4	2N3055	Microsemi Corporation	NPN POWER SILICON TRANSISTOR = 100Ω Collector-Emitter Breakdown Voltage VBE = -1.5 Vdc, IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Emitter Cutoff Current VBE = -1.5 Vdc; VCE = 100 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence,
5	2N3375	Microsemi Corporation	RF & MICROWAVE TRANSISTORS
6	2N3743	Microsemi Corporation	PNP HIGH VOLTAGE SILICON TRANSISTOR .0 250 250 250 Vdc Collector-Emitter Breakdown Voltage IC = 100 µAdc V(BR)CBO Vdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 250 Vdc VCB = 150 Vdc VCB = 200 Vdc V(BR)EBO 2N3743 2N4930 2N4931 Vdc ICBO ηAdc
7	2N3960	Microsemi	NPN SILICON SWITCHING TRANSISTOR
8	2N3029	Microsemi Corporation	SCRs
9	2N3031	Microsemi Corporation	SCRs
10	2N3439L	Microsemi Corporation	NPN LOW POWER SILICON TRANSISTOR 2.0 10 Vdc µAdc µAdc µAdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3439, L, 2N3440, L, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol ICEX Min. Max. U
11	2N3584	Microsemi Corporation	5 Amp/ 375V/ High Voltage NPN Silicon Power Transistors • • • High Voltage: 250 to 500V Fast Switching: tf < 3µ sec. High Power: 35 Watts • • High Current: 2 Amps Low VCE (SAT) 5 Amp, 375V, High Voltage NPN Silicon Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE D
12	2N3634L	Microsemi Corporation	PNP SILICON AMPLIFIER TRANSISTOR er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 5
13	2N3637	Microsemi Corporation	PNP SILICON AMPLIFIER TRANSISTOR er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 5
14	2N3637L	Microsemi Corporation	PNP SILICON AMPLIFIER TRANSISTOR er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 5
15	2N3792	Microsemi	PNP HIGH POWER SILICON TRANSISTOR
16	2N3501	Microsemi	NPN SILICON SWITCHING TRANSISTOR
17	2N3960UB	Microsemi	NPN SILICON SWITCHING TRANSISTOR
18	JANTX2N3634	Microsemi Corporation	PNP SILICON AMPLIFIER TRANSISTOR er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 5
19	2N3501UB	Microsemi Corporation	NPN Transistor • • • Surface mount equivalent of JEDEC registered 2N3501 number. JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/366. (See part nomenclature for all available options.) RoHS compliant by design. UB Package Also available
20	2N3027	Microsemi Corporation	SCRs