Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N3375 |
| Part Number | 2N3375 |
| Manufacturer | Motorola |
| Title | NPN silicon RF Power transistors |
| Description | 2N3375(SILlCON) 2N3553 2N3632 2N 3961 •CASE 79 (10·39) 2N3553 ·'·CASE 24 (10·102) 2N3961 * Collector Connected "·CASE 36 (10·60) to Case .. Collector electrically connected to case; stud electrically 2N3375 isolated from case 2N3632 *•• Stud electrically Isolated from case NPN silicon RF . |
| Features | STICS Collector-Emitter Sustaining Voltage* (IC = 200 mAde, IB = 0) Symbol Min Max Unit BVCEO(sus) * 40 . Vdc Emitter-Base Breakdown Voltage (~ = 0.25 mAde, IC = 0) (IE = O. 1 mAde, IC = 0) (IE = 1. 0 mAde, IC = 0) 2N3632 2N3375, 2N3553 2N3961 Collector Cutoff Current (VCE = 30 Vde, IB = 0) 2N3375, 2N3553 2N3632 Collector Cutoff Current (VCE = 30 Vdc, VBE( ff) = 1. 5 Vdc, TC = 200'C) o. |
2N3375 |
| Part Number | 2N3375 |
| Manufacturer | Advanced Semiconductor |
| Title | NPN SILICON RF POWER TRANSISTOR |
| Description | The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region. PACKAGE STYLE TO- 60(ISOLATED) FEATURES INCLUDE: • Isolated Package MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 1.5 A 40 V 11.6 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 15 . |
| Features |
INCLUDE:
• Isolated Package MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 1.5 A 40 V 11.6 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 15 C/W O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS SYMBOL BVCEO BVCEX BVCBO ICEO IEBO hFE VCE(SAT) Cob ft Pout GP η TC = 25 C O TEST CONDITIONS IC = 200 mA VBE = -1.5 V IC = 500 µA VCE = 30 V VEB = 4.0 V VCE = 5.0 V IC = 500 mA VCB = 30 V VCE . |
2N3375 |
| Part Number | 2N3375 |
| Manufacturer | New Jersey Semi-Conductor |
| Title | RF & MICROWAVE TRANSISTORS |
| Description | Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N337 |
Advanced |
Silicon Transistors |
|
| 2 | 2N3370 |
Siliconix |
n-channel JFET |
|
| 3 | 2N3300 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 4 | 2N3300 |
Central |
Small Signal Transistors |
|
| 5 | 2N3300 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | 2N3300 |
New Jersey Semi-Conductor |
Transistor |
|
| 7 | 2N3301 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 8 | 2N3301 |
Central Semiconductor |
Small Signal Transistors |
|
| 9 | 2N3302 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 10 | 2N3302 |
New Jersey Semi-Conductor |
Transistor |
|
Desde 2024. D4U Semiconductor.
|