Distributor | Stock | Price | Buy |
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2N3584 |
Part Number | 2N3584 |
Manufacturer | SavantIC |
Title | Silicon NPN Power Transistors |
Description | ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25 ·VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amp. |
Features | to case MAX 5.0 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current g. |
2N3584 |
Part Number | 2N3584 |
Manufacturer | Comset Semiconductor |
Title | NPN SILICON POWER TRANSISTORS |
Description | NPN 2N3583 – 2N3584 – 2N3585 NPN SILICON POWER TRANSISTORS. The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case. They are designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and hig. |
Features |
17/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N3583 – 2N3584 – 2N3585 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO Ratings Test Condition(s) 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3583 2N3584 2N3585 2N3584 2N3. |
2N3584 |
Part Number | 2N3584 |
Manufacturer | NTE |
Title | Silicon NPN Transistors |
Description | The 2N3583, 2N3584, and 2N3585 are silicon transistors in a TO66 type package designed for high− speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: D TO66. |
Features | D TO66 Type Package D Continuous Collector Current: IC = 2A D Power Dissipation: PD = 35W @ TC = +25C D Collector−Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 1A, IB = 125mA Absolute Maximum Ratings: Collector−Emitter 2N3583 . . Voltage, ........ V. .C.E.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
2N3584 |
Part Number | 2N3584 |
Manufacturer | Microsemi Corporation |
Title | 5 Amp/ 375V/ High Voltage NPN Silicon Power Transistors |
Description | These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial,. |
Features |
• • • High Voltage: 250 to 500V Fast Switching: tf < 3µ sec. High Power: 35 Watts • • High Current: 2 Amps Low VCE (SAT) 5 Amp, 375V, High Voltage NPN Silicon Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation . |
2N3584 |
Part Number | 2N3584 |
Manufacturer | Seme LAB |
Title | NPN SILICON TRANSISTOR |
Description | 2N3584 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 250V IC = 2A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 . |
Features | ed by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 1-Aug-02 . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N3583 |
NTE |
Silicon NPN Transistors | |
2 | 2N3583 |
Microsemi Corporation |
5 Amp/ 250V/ High Voltage NPN Silicon Power Transistors | |
3 | 2N3583 |
Central Semiconductor |
SILICON NPN TRANSISTORS | |
4 | 2N3583 |
Comset Semiconductor |
NPN SILICON POWER TRANSISTORS | |
5 | 2N3583 |
Seme LAB |
Bipolar NPN Device | |
6 | 2N3583 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
7 | 2N3585 |
Microsemi Corporation |
5 Amp/ 500V/ High Voltage NPN Silicon Power Transistors | |
8 | 2N3585 |
Mospec Semiconductor |
POWER TRANSISTORS | |
9 | 2N3585 |
Central Semiconductor |
SILICON NPN TRANSISTORS | |
10 | 2N3585 |
SavantIC |
Silicon NPN Power Transistors |