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Mos-Tech Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor • –3.3 A, –20 V. RDS(ON) = 0.072 Ω @ VGS = –4.5 V RDS(ON) = 0.096Ω @ VGS = –2.5 V • Low gate charge (3.6 nC typical) • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling ca |
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MATRIX MICROTECH |
P-Channel Enhancement Mode MOSFET APPLICATIONS ¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V ¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.5V ¾ Super high density cell design for extremely low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ SOT-23-3L package desi |
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MOS-TECH |
N-Channel Power MOSFET Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 24.5 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant November 2010 General Description This N-Channel |
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MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -20V -4.6A 70@ VGS=-4.5V 95@ VGS=-2.5V NOTE：The MT2307 is available in a lead-free package |
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Mostech |
P-Channel Enhancement Mode Field Effect Transistor te-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage S ymbol BVDSS IDSS IGSS V G S (th) Drain-S ource On-S tate R esistance R DS(ON) On-S tate Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS c ID(ON) gFS Input Capacitance |
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MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 20V 4.5A 30@ VGS=4.5V 50@ VGS=2.5V NOTE：The MT2312 is available in a lead-free package D |
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MOS-TECH |
N-Channel Power MOSFET ƽSuper high dense cell design for low RDS(ON) ƽRugged and reliable ƽSimple drive requirement ƽSOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m¡) Typ 20V 4.0A 46 @ VGS=10V 65@ VGS=4.5V NOTE˖The MT2306 is available in a lead-free package D |
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MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 20V 3.6A 36@ VGS=4.5V 45@ VGS=2.5V NOTE：The MT2302 is available in a lead-free package D |
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MOS-TECH |
N-Channel Power MOSFET ƽSuper high dense cell design for low RDS(ON) ƽRugged and reliable ƽSimple drive requirement ƽSOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m¡) Typ 20V 4.2A 18 @ VGS=10V 21 @ VGS=4.5V NOTE˖The MT2300 is available in a lead-free package D |
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MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -20V -4.6A 85@ VGS=-4.5V 105 @ VGS=-2.5V NOTE：The MT2305 is available in a lead-free pack |
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Matrix Microtech |
N-Channel MOSFET RDS(ON) =150mΩ @ VGS = 10V RDS(ON) =175mΩ @ VGS = 5V APPLICATIONS Management ¾ 100V/10A, ¾ 100V/10A, ¾ ¾ ¾ ¾ POWER ¾ Port ¾ DC/ ¾ Load ¾ DSC able Equipment DC Converter Switch Super high density cell design for extremely ultra low RDS(ON) Exc |
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Matrix Microtech |
P-Channel MOSFET ¾ -100V/-10A, RDS(ON) =205mΩ @ VGS = -10V ¾ -100V/-10A, RDS(ON) =225mΩ @ VGS = -7V ¾ Super high density cell design for extremely ultra low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ TO-252 package design PIN CONFIGURAT |
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Desde 2024. D4U Semiconductor.
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