MT2305 |
Part Number | MT2305 |
Manufacturer | MOS-TECH |
Description | Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT2305 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● ... |
Features |
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -20V -4.6A 85@ VGS=-4.5V 105 @ VGS=-2.5V NOTE:The MT2305 is available in a lead-free package D S G S G D ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -20 ±12 -4.6 - Pulse d b IDM -12 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG ... |
Document |
MT2305 Data Sheet
PDF 567.98KB |
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