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| Part Number | MT2301 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MT2301 |
| Manufacturer | MATRIX MICROTECH |
| Title | P-Channel Enhancement Mode MOSFET |
| Description | MT2301 P- Channel Enhancement Mode MOSFET The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularl. |
| Features | APPLICATIONS ¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V ¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.5V ¾ Super high density cell design for extremely low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ SOT-23-3L package design ¾ POWER Management in Note ¾ Portable Equipment ¾ Battery Powered System ¾ DC/DC Converter ¾ Load Switch ¾ DSC PIN CONFIGURATION DRAIN 2 SOUR. |
| Part Number | MT2301 |
| Manufacturer | Mostech |
| Title | P-Channel Enhancement Mode Field Effect Transistor |
| Description | MMostech Mostech electronics C orp. MT 2301 P-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y VDS S ID R DS (ON) ( m W ) Max -20V -3.6A 80 @ VGS = -4.5V 100 @ VGS = -2.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S OT-23 . |
| Features | te-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage S ymbol BVDSS IDSS IGSS V G S (th) Drain-S ource On-S tate R esistance R DS(ON) On-S tate Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS c ID(ON) gFS Input Capacitance C IS S Output Capacitance COSS R everse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS c Turn-On Delay Time tD(ON) R ise Time tr Turn-O. |
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|---|---|---|---|---|
| 1 | MT2300 |
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| 2 | MT2302 |
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| 3 | MT2305 |
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| 4 | MT2306 |
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| 5 | MT2307 |
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| 6 | MT230DW01-V1 |
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| 7 | MT230DW01-V2 |
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| 8 | MT230DW01-V3 |
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| 9 | MT230DW01-VA |
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| 10 | MT230DW03-V0 |
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Desde 2024. D4U Semiconductor.
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