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MT2301 |
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| Part Number | MT2301 |
| Manufacturer | Mos-Tech Semiconductor |
| Description | This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate c... |
| Features |
• –3.3 A, –20 V. RDS(ON) = 0.072 Ω @ VGS = –4.5 V RDS(ON) = 0.096Ω @ VGS = –2.5 V • Low gate charge (3.6 nC typical) • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D S SOT -23 TM G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continu... |
| Document |
 MT2301 Data Sheet
PDF 679.67KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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