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MT2300 |
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| Part Number | MT2300 |
| Manufacturer | MOS-TECH |
| Description | ॺሾԭᴹޜਨ Mos-Tech Semiconductor Co.,LTD. MT2300 N-Channel Enhancement Mode Field Effect Transistor FEATURES ƽSuper high dense cell design for low RDS(ON) ƽRugged and reliable ƽSimple drive requi... |
| Features |
ƽSuper high dense cell design for low RDS(ON) ƽRugged and reliable ƽSimple drive requirement ƽSOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m¡) Typ
20V 4.2A
18 @ VGS=10V 21 @ VGS=4.5V
NOTE˖The MT2300 is available in a lead-free package
D
S G
D
G S
ABSOLUTE MAXIMUM RATINGS˄TA=25ćunless otherwise noted˅
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousϛ@Tj=125ć
Symbol
VDS VGS ID
Limit
20 ± 12 4.2
- Pulse d b
IDM 12
Drain-source Diode Forward Currentϛ Maximum Power Dissipationϛ Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
1.25 1.... |
| Document |
 MT2300 Data Sheet
PDF 303.08KB |
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Desde 2024. D4U Semiconductor.
|