| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Kexin |
Silicon NPN Transistor +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curr |
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Kexin |
NPN Silicon Epitaxial Transistor 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction te |
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Kexin |
Silicon NPN Transistor 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation |
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Kexin |
NPN Transistor +0.1 2.4-0.1 Collector current :IC=0.2A Power dissipation :PC=0.15W +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base |
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Kexin |
Silicon NPN Transistor 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base curre |
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Kexin |
Silicon NPN Transistor Transition frequency is high and dependent on current excellently. +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter |
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Kexin |
Small Signal Transistor High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base vo |
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Guangdong Kexin Industrial |
NPN Silicon Epitaxial Transistor High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipatio |
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Kexin |
Transistor World standard miniature package. High hFE hFE=800 to 1600. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipation Junctio |
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Kexin |
NPN Silicon Transistor 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) power dissipation |
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Kexin |
Silicon NPN Epitaxial Transistor +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 High fT : fT=6.5GHz 0.55 Low Noise Figure: NF=2.3dB(Typ.) f=1GHz +0.1 1.3-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Rati |
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Kexin |
Silicon NPN Transistor High DC current gain. Low collector saturation voltage. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High power dissipation. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 |
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Kexin |
NPN Silicon Transistor Excellent Switching Times +0.2 9.70 -0.2 tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A High colletor Breakdown Voltage: VCEO=400V +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5 |
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Kexin |
Silicon NPN Transistor 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base curre |
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Kexin |
NPN Epitaxial Planar Silicon Transistor 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation J |
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Kexin |
NPN Transistor +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz +0.1 1.3-0.1 Low noise and high gain. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0 |
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Kexin |
High-voltage Amplifier Transistor +0.1 2.4-0.1 High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter volta |
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Kexin |
High-frequency Amplifier Transistor Low collector capacitance. (Cob : Typ. 1.3pF) Low rbb, high gain, and excellent noise characteristics. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Col |
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Kexin |
NPN Epitaxial Planar Silicon Transistors 3 High reverse hFE (150 typ). Small ON resistance [Ron=1W (IB=5mA)]. +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Coll |
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Kexin |
Silicon NPN Transistor Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maxi |
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Desde 2024. D4U Semiconductor.
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