Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC2859 |
| Part Number | 2SC2859 |
| Manufacturer | Jin Yu Semiconductor |
| Title | TRANSISTOR |
| Description | 2 SC2859 TRANSISTOR (NPN) SOT–23 FEATURES Excellent hFE Linearity Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dis. |
| Features |
Excellent hFE Linearity Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 35 30 5 500 150 833 150 -55～+150 Unit V V V. |
2SC2859 |
| Part Number | 2SC2859 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN Transistor |
| Description | 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1182. Absolut. |
| Features | OSHIBA 2-3F1A absolute maximum ratings. Weight: 0.012 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off . |
2SC2859 |
| Part Number | 2SC2859 |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | Elektronische Bauelemente 2SC2859 0.5A , 35V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Excellent hFE Linearity Switching Applications CLASSIFICATION OF hFE (1) Product-Rank 2SC2859-O 2SC2859-Y Range 70~140 120~240 M. |
| Features |
Excellent hFE Linearity Switching Applications CLASSIFICATION OF hFE (1) Product-Rank 2SC2859-O 2SC2859-Y Range 70~140 120~240 Marking WO WY 2SC2859-GR 200~400 WG SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7’ inch REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 RE. |
2SC2859 |
| Part Number | 2SC2859 |
| Manufacturer | GME |
| Title | Silicon Transistor |
| Description | Silicon Epitaxial Planar Transistor FEATURES Power dissipation：PC=150mW. Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA). Complementary to 2SA1182. Pb Lead-free APPLICATIONS Audio frequency general purpose amplifier applications. Production specification 2SC2859 SOT-23 ORDERING INFO. |
| Features |
Power dissipation：PC=150mW. Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA). Complementary to 2SA1182. Pb Lead-free APPLICATIONS Audio frequency general purpose amplifier applications. Production specification 2SC2859 SOT-23 ORDERING INFORMATION Type No. 2SC2859 Marking WO/WY/WG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Un. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2851 |
Panasonic Semiconductor |
Transistors |
|
| 2 | 2SC2853 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC2853 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 4 | 2SC2854 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC2855 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC2855 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 7 | 2SC2856 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC2856 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 9 | 2SC2857 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 10 | 2SC2857 |
Sanyo |
Transistor |
|
Desde 2024. D4U Semiconductor.
|