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2SC2859 |
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| Part Number | 2SC2859 |
| Manufacturer | GME |
| Description | Silicon Epitaxial Planar Transistor FEATURES Power dissipation：PC=150mW. Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA). Complementary to 2SA1182. Pb Lead-free APPLICATIONS Audio frequ... |
| Features |
Power dissipation：PC=150mW. Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA). Complementary to 2SA1182. Pb Lead-free APPLICATIONS Audio frequency general purpose amplifier applications. Production specification 2SC2859 SOT-23 ORDERING INFORMATION Type No. 2SC2859 Marking WO/WY/WG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 35 V 30 ... |
| Document |
 2SC2859 Data Sheet
PDF 228.27KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2851 |
Panasonic Semiconductor |
Transistors |
|
| 2 | 2SC2853 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC2853 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 4 | 2SC2854 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC2855 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC2855 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
Desde 2024. D4U Semiconductor.
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