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2SC2859 |
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| Part Number | 2SC2859 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excell... |
| Features |
OSHIBA
2-3F1A
absolute maximum ratings.
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current
DC current gain
(Note)
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
ICBO IEBO hFE (1) hFE (2) ... |
| Document |
 2SC2859 Data Sheet
PDF 201.70KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2851 |
Panasonic Semiconductor |
Transistors |
|
| 2 | 2SC2853 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC2853 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 4 | 2SC2854 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC2855 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC2855 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
Desde 2024. D4U Semiconductor.
|