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2SC3356 Silicon NPN Transistor

2SC3356


2SC3356
Part Number 2SC3356
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2SC3356

Kexin
2SC3356
Part Number 2SC3356
Manufacturer Kexin
Title NPN Transistor
Description SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz +0.1 1.3-0.1 Low noise and .
Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz +0.1 1.3-0.1 Low noise and high gain. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltag.

2SC3356

UTC
2SC3356
Part Number 2SC3356
Manufacturer UTC
Title NPN SILICON TRANSISTOR
Description The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors). 12 SOT-23-3 (JEDEC TO-23.
Features * Low Noise and High Gain * High Power Gain 1 SOT-89  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC3356L-x-AE2-R 2SC3356G-x-AE2-R SOT-23-3 2SC3356L-x-AE3-R 2SC3356G-x-AE3-R SOT-23 2SC3356L-x-AB3-R 2SC3356G-x-AB3-R SOT-89 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Description 123 BEC BEC BCE Packing Tape Reel Tape Reel Tape Reel 2SC3356G-.

2SC3356

SeCoS
2SC3356
Part Number 2SC3356
Manufacturer SeCoS
Title NPN Transistor
Description Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES  Low Noise Amplifier at VHF, UHF and CATV band  Low Noise and High Gain  High Power Gain Collector  SOT-23 A L 3 Top View CB 12 K.
Features
 Low Noise Amplifier at VHF, UHF and CATV band
 Low Noise and High Gain
 High Power Gain Collector
 SOT-23 A L 3 Top View CB 12 KE 1 3 2  Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) F REF. A B C D E F PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation J.

2SC3356

Renesas
2SC3356
Part Number 2SC3356
Manufacturer Renesas
Title NPN Silicon RF Transistor
Description Summary Previous No. :PU10209EJ02V0DS Modification of ORDERING INFORMATION Modification of hFE CLASSIFICATION All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is iss.
Features
• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC3356 2SC3356-T1B Order Number 2SC3356-A 2SC3356-T1B-A Package Quantity 3-pin Minimold 50 pcs (Non reel) (Pb-Free) 3 kpcs/reel Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Col.

2SC3356

NEC
2SC3356
Part Number 2SC3356
Manufacturer NEC
Title NPN Silicon Transistor
Description The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 0.4 −0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 −0.15 +0.1 FEATURES • Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = .
Features
• Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO.

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