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JCET |
PNP Transistor z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg |
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JCET |
PNP Transistor z High Breakdown Voltage z Complement to Type 2SD718 APPLICATIONS z Power Amplifier Applications TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector- |
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JCET |
PNP Transistor z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) z Complimentary to 2SD596. SOT-23 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Colle |
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JCET |
PNP Transistor z General Purpose Switching and Amplification TO – 92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base |
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JCET |
PNP Transistor z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissip |
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JCET |
PNP Transistor z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissip |
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JCET |
PNP Transistor z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage |
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JCET |
PNP Transistor z Low collector saturation voltage z Execllent current-to-gain characteristics 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter VCBO Collector-Base Voltage Value -30 Unit V VCEO Collector-Em |
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JCET |
PNP Transistor z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter- |
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JCET |
PNP Transistor z Low VCE(sat) z Compliments 2SD1664 SOT-89-3L 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Contin |
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JCET |
PNP Transistor z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collect |
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JCET |
PNP Transistor z High Current Output up to 3A z Low Collector-Emitter Saturation Voltage z Complement to 2SD886 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Vol |
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Desde 2024. D4U Semiconductor.
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