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2SB1189 |
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| Part Number | 2SB1189 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR (PNP) SOT-89-3L FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RA... |
| Features |
z High breakdown voltage z Complements to 2SD1767
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR 1
2
3. EMITTER
3
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO VEBO IC PC TJ Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -80
-80 -5 -0.7 0.5 150 -55~150
Unit V
V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Coll... |
| Document |
 2SB1189 Data Sheet
PDF 611.70KB |
Desde 2024. D4U Semiconductor.
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