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2SB1386 |
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| Part Number | 2SB1386 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES z Low collector saturation voltage z Execllent current-to-g... |
| Features |
z Low collector saturation voltage
z Execllent current-to-gain characteristics
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. EMITTER
Symbol
Parameter
VCBO
Collector-Base Voltage
Value -30
Unit V
VCEO
Collector-Emitter Voltage
-20 V
VEBO
Emitter-Base Voltage
-6 V
IC Continuous Collector Current -5 A
ICP* Pulsed Collector Current
-10 A
PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature
0.5 150 -55~150
W
℃
℃
*Single pulse,PW=10ms
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base br... |
| Document |
 2SB1386 Data Sheet
PDF 354.01KB |
Desde 2024. D4U Semiconductor.
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