Busque con el número de pieza junto con el fabricante o la descripción
2SB1658 |
Click to view a larger image
| Part Number | 2SB1658 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR (PNP) TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ u... |
| Features |
z Low VCE(sat) z High DC Current Gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -30 -30 -6 -5 1 125 150
-55~+150
1. EMITTER
2. COLLECTOR
3. BASE
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakd... |
| Document |
 2SB1658 Data Sheet
PDF 101.01KB |
Desde 2024. D4U Semiconductor.
|