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Intersil Corporation |
N-Channel Power MOSFET • 3.5A, 100V, rDS(ON) = 0.600Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
N-Channel Power MOSFET • 8A, 100V, rDS(ON) = 0.230Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 1.5A, 250V, rDS(ON) = 2.30Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
5A/ 200V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs • 5A, 200V, rDS(ON) = 0.460Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
5A/ 200V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs • 5A, 200V, rDS(ON) = 0.460Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs • 4A, 250V, rDS(ON) = 0.610Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs • 5A, 250V, rDS(ON) = 0.480Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs • 5A, 250V, rDS(ON) = 0.480Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
N-Channel Power MOSFET • 9A, 100V, rDS(ON) = 0.180Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
N-Channel Power MOSFET • 9A, 100V, rDS(ON) = 0.180Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 1.5A, 250V, rDS(ON) = 2.30Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs • 4A, 250V, rDS(ON) = 0.610Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs • 6A, 200V, rDS(ON) = 0.350Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs • 2A, 500V, rDS(ON) = 2.50Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Of |
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Intersil Corporation |
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs • 2.5A, -100V, rDS(ON) = 1.30Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs • 5A, -100V, rDS(ON) = 0.680Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs • 7A, -100V, rDS(ON) = 0.300Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs • 5A, -200V, rDS(ON) = 0.670Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
N-Channel Power MOSFET • 3.5A, 100V, rDS(ON) = 0.600Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs • 6A, 200V, rDS(ON) = 0.350Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Desde 2024. D4U Semiconductor.
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