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FSL234R |
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| Part Number | FSL234R |
| Manufacturer | Intersil Corporation |
| Description | The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET... |
| Features |
• 4A, 250V, rDS(ON) = 0.610Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 4.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV ... |
| Document |
 FSL234R Data Sheet
PDF 46.04KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FSL234D |
Intersil Corporation |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
|
| 2 | FSL230D |
Intersil Corporation |
5A/ 200V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
|
| 3 | FSL230R |
Intersil Corporation |
5A/ 200V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
|
| 4 | FSL23A0D |
Intersil Corporation |
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
|
| 5 | FSL23A0R |
Intersil Corporation |
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
|
| 6 | FSL23A4D |
Intersil Corporation |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
|
Desde 2024. D4U Semiconductor.
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