FSL9110R |
Part Number | FSL9110R |
Manufacturer | Intersil Corporation |
Description | FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a seri... |
Features |
• 2.5A, -100V, rDS(ON) = 1.30Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 0.3nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEV... |
Document |
FSL9110R Data Sheet
PDF 57.96KB |
Similar Datasheet
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---|---|---|---|---|
1 | FSL9110D |
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2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs | |
2 | FSL9130D |
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3 | FSL9130R |
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4 | FSL913A0D |
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7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs | |
5 | FSL913A0R |
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7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs | |
6 | FSL9230D |
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3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |