FSL214D |
Part Number | FSL214D |
Manufacturer | Intersil Corporation |
Description | FSL214D, FSL214R Data Sheet October 1998 File Number 4573 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Ha... |
Features |
• 1.5A, 250V, rDS(ON) = 2.30Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 1.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Symbol D G S Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVE... |
Document |
FSL214D Data Sheet
PDF 57.21KB |
Similar Datasheet
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1 | FSL214R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs | |
2 | FSL206MR |
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3 | FSL206MR |
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4 | FSL230D |
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5A/ 200V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | |
5 | FSL230R |
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5A/ 200V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | |
6 | FSL234D |
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4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |