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International Rectifier |
IRF3205Z ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 6.5mΩ ID = 75A Description Specifically designed for Automotive application |
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International Rectifier |
Power MOSFET ous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering |
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International Rectifier |
HEXFET Power MOSFET |
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International Rectifier |
Power MOSFET available for low-profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Pow |
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International Rectifier |
N-Channel Power MOSFET available for low-profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Pow |
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International Rectifier |
Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5m |
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International Rectifier |
Power MOSFET available for low-profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Pow |
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International Rectifier |
Power MOSFET available for low-profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Pow |
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International Rectifier |
Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5m |
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International Rectifier |
Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5m |
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International Rectifier |
HEXFET Power MOSFET ● ● ● ● ● AUIRF3205Z AUIRF3205ZS HEXFET® Power MOSFET D ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V |
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International Rectifier |
HEXFET Power MOSFET ● ● ● ● ● AUIRF3205Z AUIRF3205ZS HEXFET® Power MOSFET D ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V |
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International Rectifier |
HEXFET Power MOSFET B A M 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE |
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International Rectifier |
Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5m |
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International Rectifier |
Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5m |
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International Rectifier |
Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5m |
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International Rectifier |
Power MOSFET l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* HEXFET® Po |
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International Rectifier |
HEXFET TRANSISTORS n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Continuous D |
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Desde 2024. D4U Semiconductor.
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