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IRF3205Z |
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| Part Number | IRF3205Z |
| Manufacturer | International Rectifier |
| Description | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu... |
| Features |
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 6.5mΩ
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient an... |
| Document |
 IRF3205Z Data Sheet
PDF 389.22KB |
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Desde 2024. D4U Semiconductor.
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