IRF3205ZPbF |
Part Number | IRF3205ZPbF |
Manufacturer | International Rectifier |
Description | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu... |
Features |
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 6.5mΩ
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient an... |
Document |
IRF3205ZPbF Data Sheet
PDF 389.22KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF3205Z |
International Rectifier |
Power MOSFET | |
2 | IRF3205Z |
INCHANGE |
N-Channel MOSFET | |
3 | IRF3205ZL |
International Rectifier |
Power MOSFET | |
4 | IRF3205ZLPbF |
International Rectifier |
Power MOSFET | |
5 | IRF3205ZS |
International Rectifier |
Power MOSFET | |
6 | IRF3205ZS |
INCHANGE |
N-Channel MOSFET |