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International Rectifier |
Power MOSFET – – – – – – Max. 20 50 Units °C/W Notes through are on page 8 www.irf.com 1 3/19/02 IRF7413 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coeff |
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International Rectifier |
Power MOSFET Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Relia |
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International Rectifier |
Power MOSFET – – – – – – Max. 20 50 Units °C/W Notes through are on page 8 www.irf.com 1 3/19/02 IRF7413 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coeff |
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International Rectifier |
Power MOSFET pplication. PD - 9.1356E IRF7416 HEXFET® Power MOSFET S1 S2 S3 G4 8 A D 7D 6D 5D Top View VDSS = -30V RDS(on) = 0.02Ω SO-8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS dv/dt TJ, TSTG Parameter Continuo |
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International Rectifier |
HEXFET POWER MOSFET SURFACE MOUNT n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC |
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International Rectifier |
HEXFET Power MOSFET – – – Max. 20 50 Units °C/W f Notes through are on page 10 www.irf.com 1 6/23/03 IRF7413Z Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss t |
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International Rectifier |
Control FET Junction-to-Ambient Typ. – – – – – – Max. 20 50 Units °C/W f Notes through are on page 10 www.irf.com 1 6/30/05 IRF7413ZPbF BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf C |
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International Rectifier |
HEXFET Power MOSFET reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25 |
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International Rectifier |
Power MOSFET age is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C Continuous Drain Current, VGS |
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International Rectifier |
HEXFT Power MOSFET Lead Junction-to-Ambient Typ. – – – – – – Max. 20 50 Units °C/W f Notes through are on page 10 www.irf.com 1 09/14/06 IRF7413ZUPbF BVDSS ∆Β VDSS/∆T J RDS(on) V GS(th) ∆V GS(th)/∆T J IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr t |
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International Rectifier |
HEXFET Power MOSFET s Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation |
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International Rectifier |
HEXFET Power MOSFET meter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating |
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International Rectifier |
Power MOSFET l l l l l l l l l AUIRF7416Q HEXFET® Power MOSFET S 1 2 3 4 8 7 Advanced Process Technology Low On-Resistance P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotiv |
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International Rectifier |
N-CHANNEL POWER MOSFET n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C |
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International Rectifier |
Power MOSFET Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF7410TRPbF-1 S1 S2 S3 G4 HEXFET® Power MOSFET 8 A D 7D 6D 5D Top View SO-8 Benefits ⇒ Mul |
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International Rectifier |
Power MOSFET Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF7410TRPbF-1 S1 S2 S3 G4 HEXFET® Power MOSFET 8 A D 7D 6D 5D Top View SO-8 Benefits ⇒ Mul |
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International Rectifier |
Power MOSFET signed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EA |
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International Rectifier |
HEXFET Power MOSFET atings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipat |
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International Rectifier |
Power MOSFET Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Relia |
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International Rectifier |
Silicon Rectifier Diode |
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Desde 2024. D4U Semiconductor.
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