IRF7416 |
Part Number | IRF7416 |
Manufacturer | International Rectifier |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
Features |
pplication.
PD - 9.1356E
IRF7416
HEXFET® Power MOSFET
S1 S2 S3 G4
8
A D
7D
6D
5D
Top View
VDSS = -30V RDS(on) = 0.02Ω
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
VGS EAS dv/dt TJ, TSTG
Parameter Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ - 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max. -10 -7.1 -45 2.5 0.02 ± 20 370 -5.0 -55 to + 150
Units
A
W W/°C
V mJ V/ns °C
Thermal Resis... |
Document |
IRF7416 Data Sheet
PDF 265.18KB |
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