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IRF7410PBF |
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| Part Number | IRF7410PBF |
| Manufacturer | International Rectifier |
| Description | These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing S 1 techniques to achieve the extremely low on-resistance S 2 per silicon area. This benefit provides... |
| Features |
meter
VDS
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor
VGS TJ, TSTG
Gate-to-Source Voltage Junction and Storage Temperature Range
Max. -12 -16 -13 -65 2.5 1.6 20 ±8 -55 to +150
Units V
A
W mW/°C
V °C
Thermal Resistance
RθJA
www.irf.com
Parameter Maximum Junction-to-Ambient
Max. 50
Units
°C/W
1
11/17/08
IRF7410PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Sy... |
| Document |
 IRF7410PBF Data Sheet
PDF 210.86KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF7410PBF-1 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF7410 |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRF7410GPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRF7410TRPBF-1 |
International Rectifier |
Power MOSFET |
|
| 5 | IRF741 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | IRF741 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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