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IRF7410 |
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| Part Number | IRF7410 |
| Manufacturer | International Rectifier |
| Description | These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designe... |
| Features |
s
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -16 -13 -65 2.5 1.6 20 ±8 -55 to +150
Units
V A
W mW/°C V °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
50
Units
°C/W
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1
07/11/01
www.DataSheet.in
IRF7410
Electrical Characteristics @ TJ = 25°C (unless otherwi... |
| Document |
 IRF7410 Data Sheet
PDF 125.57KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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