| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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International Rectifier |
IRGIB10B60KD1 • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated a |
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International Rectifier |
SCHOTTKY RECTIFIER Units A V A V °C The 10BQ100PbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, fre |
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International Rectifier |
SCHOTTKY RECTIFIER The 10BQ100 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, b |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • |
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International Rectifier |
SCHOTTKY RECTIFIER The 10BQ040 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, b |
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International Rectifier |
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE Units For surface mounted applications Low profile package A V A 1.7 100 V ns °C 10BF.. 20 40 1 100 to 800 30 1.4 50 - 50 to 150 60 80 Built-in stress relief Compatible with all pick & place equipments Ultrafast recovery times for high efficiency |
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International Rectifier |
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE Units For surface mounted applications Low profile package A V A 1.7 100 V ns °C 10BF.. 20 40 1 100 to 800 30 1.4 50 - 50 to 150 60 80 Built-in stress relief Compatible with all pick & place equipments Ultrafast recovery times for high efficiency |
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International Rectifier |
SCHOTTKY RECTIFIER Units A V A V °C The 10BQ040PbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, fre |
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International Rectifier |
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE Units For surface mounted applications Low profile package A V A 1.7 100 V ns °C 10BF.. 20 40 1 100 to 800 30 1.4 50 - 50 to 150 60 80 Built-in stress relief Compatible with all pick & place equipments Ultrafast recovery times for high efficiency |
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International Rectifier |
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE Units For surface mounted applications Low profile package A V A 1.7 100 V ns °C 10BF.. 20 40 1 100 to 800 30 1.4 50 - 50 to 150 60 80 Built-in stress relief Compatible with all pick & place equipments Ultrafast recovery times for high efficiency |
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International Rectifier |
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE Units For surface mounted applications Low profile package A V A 1.7 100 V ns °C 10BF.. 20 40 1 100 to 800 30 1.4 50 - 50 to 150 60 80 Built-in stress relief Compatible with all pick & place equipments Ultrafast recovery times for high efficiency |
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Pan Jit International Inc. |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER C 0.118 (3.0) GBJ 0.996(25.3) 0.972(24.7) Unit: inch ( mm ) • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Su |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated a |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free G E tsc > 10µs, TJ=150°C |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free G E tsc > 10µs, TJ=150°C |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated a |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated a |
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First Components International |
(GUF10x) ULTRA-FAST SWITCHING MEGARECTIFIERS n HIGH TEMPERATURE METALLURGICALLY BONDED CONSTRUCTION n SINTERED GLASS CAVITY-FREE JUNCTION n 1.0 AMP OPERATION @ TA = 55°C, WITH NO THERMAL RUNAWAY n TYPICAL IR < 0.2 µAmp Electrical Characteristics @ 25 oC. Maximum Ratings Peak Repetitive Reverse |
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Desde 2024. D4U Semiconductor.
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