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IRGSL10B60KDPBF |
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| Part Number | IRGSL10B60KDPBF |
| Manufacturer | International Rectifier |
| Description | PD - 94925A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF VCES = 600V IC = 12A, TC=100°C Features • Low VCE (on) Non Punch Thr... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free G E tsc > 10µs, TJ=150°C n-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. VCE(on) typ. = 1.8V www.DataSheet4U.com TO-220AB IRGB10B60KD D2Pak IRGS10B60KD Max. 600 22 12 44 44 22 10 44 ± 20 156 62 -55 to +150 TO-262 IRGSL10B60KD Units V Absolute Maximum Ratings P... |
| Document |
 IRGSL10B60KDPBF Data Sheet
PDF 391.96KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IRGSL10B60KD |
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INSULATED GATE BIPOLAR TRANSISTOR |
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| 2 | IRGSL14C40L |
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| 3 | IRGSL14C40LPBF |
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| 4 | IRGSL15B60KD |
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| 5 | IRGSL15B60KDPbF |
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INSULATED GATE BIPOLAR TRANSISTOR |
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| 6 | IRGSL30B60K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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