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GB10B60KD |
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| Part Number | GB10B60KD |
| Manufacturer | International Rectifier |
| Description | www.DataSheet4U.com PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100°C Features • Low VCE (on) N... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB10B60KD D2Pak IRGS10B60KD Max. 600 22 12 44 44 22 10 44 ± 20 156 62 -55 to +150 TO-262 IRGSL10B60KD Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC ... |
| Document |
 GB10B60KD Data Sheet
PDF 365.90KB |
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