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IRGIB10B60KD1 |
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| Part Number | IRGIB10B60KD1 |
| Manufacturer | International Rectifier |
| Description | PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C G E C VCES = 600V IC = 10A, TC=100°C tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.7V Absolute Maximum Ratings www.DataSheet4U.com TO-220 Full-Pak Max. 600 16 10 A 32 32 16 10 32 2500 ±20 4... |
| Document |
 IRGIB10B60KD1 Data Sheet
PDF 412.53KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGIB10B60KD1P |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGIB10B60KD1PBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGIB15B60KD1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGIB15B60KD1P |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGIB4620DPbF |
Infineon |
IGBT |
|
| 6 | IRGIB4630DPbF |
Infineon |
IGBT |
|
Desde 2024. D4U Semiconductor.
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