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Inchange Semiconductor |
Silicon NPN Power Transistor ARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistor Emitter Cutoff Current VEB=5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-2 DC Current Gain IC= 1A ; VCE= 2V hFE-1 Classifications A B 50-150 100-300 BD107 MIN TYP. MAX UNIT 60 V 1.0 V 0.5 μA 0.5 μA 50 300 35 NOTICE： |
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Inchange Semiconductor |
Silicon NPN Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VZ Zener Voltage IZ= 0.1mA V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 15mA VBE(sa |
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Inchange Semiconductor |
Silicon NPN Power Transistor BOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage |
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Inchange Semiconductor |
Silicon NPN Power Transistor ess otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collecto |
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Inchange Semiconductor |
2SD103 VCE(sat) VBE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO Collec |
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Inchange Semiconductor |
Silicon NPN Power Transistor ERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 5mA; IC= 0 VCE( |
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Inchange Semiconductor |
Silicon NPN Power Transistor oltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V ICEO Collector Cutoff Current VCE= 30V ; IB= 0 ICES Collector Cutoff Current VCE= 60V ; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= |
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Inchange Semiconductor |
Silicon NPN Darlington Power Transistor or-Emitter Breakdown Voltage IC= 50mA, RBE= 1kΩ V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB= 30mA ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff Curr |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use i |
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Inchange Semiconductor |
Silicon NPN Power Transistors V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sa |
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Desde 2024. D4U Semiconductor.
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