2SD1044 |
Part Number | 2SD1044 |
Manufacturer | Inchange Semiconductor |
Description | ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device p... |
Features |
or-Emitter Breakdown Voltage IC= 50mA, RBE= 1kΩ
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB= 30mA
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 4V
hFE classifications Q P O 700-2500 2000-5000 4000-10000 2SD1044 MIN TYP. MAX UNIT 100 V 80 V 1.7 V 10 μA 10 mA 700 10000 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained here... |
Document |
2SD1044 Data Sheet
PDF 219.38KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1040 |
INCHANGE |
NPN Transistor | |
2 | 2SD1046 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SD1046 |
INCHANGE |
NPN Transistor | |
4 | 2SD1046 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1047 |
INCHANGE |
NPN Transistor | |
6 | 2SD1047 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistors |