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2SD1032 |
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| Part Number | 2SD1032 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 ·Minimum Lot-to-Lot variations for robust device performance and reliable opera... |
| Features |
oltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V ; IB= 0
ICES
Collector Cutoff Current
VCE= 60V ; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
Switching times
ton
Turn-On Time
toff
Turn-Off Time
IC= 4A ,IB1= IB2= 0.4A
hFE-1 Classifications R Q P 40-90 70-150 120-250 2SD1032 MIN TYP. MAX UNIT 60 V 1.5 V 2 V 700 μA 400 μA 1 mA 40 250 15 0.2 μs 1.4 μs NOTICE： ISC reserves the rights to make changes of th... |
| Document |
 2SD1032 Data Sheet
PDF 217.61KB |
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