| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
Silicon Darlington NPN Power Transistor ONS VCER(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 80mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 80mA ICER Collector Cutoff Current VCR= 350V; RBE= 270Ω ICBO |
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Inchange Semiconductor |
Silicon NPN Power Transistor TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.0 V VBE(sat) Base- |
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Inchange Semiconductor |
Silicon NPN Power Transistor herwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A ICES C |
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Inchange Semiconductor |
Silicon Darlington NPN Power Transistor TIONS VCER(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 80mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 80mA ICER Collector Cutoff Current VCR= 400V; RBE= 270Ω ICB |
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Inchange Semiconductor |
Silicon NPN Power Transistor wise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A ICES Coll |
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Desde 2024. D4U Semiconductor.
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