BU522 Inchange Semiconductor Silicon Darlington NPN Power Transistor Datasheet. existencias, precio

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BU522

Inchange Semiconductor
BU522
BU522 BU522
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Part Number BU522
Manufacturer Inchange Semiconductor
Description ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ignitio...
Features ONS VCER(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 80mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 80mA ICER Collector Cutoff Current VCR= 350V; RBE= 270Ω ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2.5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 5V MIN TYP. MAX UNIT 350 V 2.5 V 2.5 V 1.0 mA 1.0 mA 40 mA 250 7.5 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 150 pF NOTICE: ISC rese...

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