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BU508A-M Inchange Semiconductor Silicon NPN Power Transistor Datasheet


Inchange Semiconductor
BU508A-M
Part Number BU508A-M
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-E...
Features herwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 IEBO Emitter Cutoff Current VEB= 6.0V ; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V hFE-2 DC Current Gain IC= 4A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; Switching times tf Fall Time IC= 4A , IB1= 0.8A; IB2= -1.6A MIN TYP. MAX UNIT 800 V 1.0 V 1.3 V 1 mA 10 mA 8 10...

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