BU508AT Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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BU508AT

Inchange Semiconductor
BU508AT
BU508AT BU508AT
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Part Number BU508AT
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT...
Features TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 4.5A; IB= 2.0A VCE= 1300V; VBE= 0 VCE= 1300V; VBE= 0; TC=125℃ VEB= 5.0V; IC= 0 1.5 V 0.1 2.0 mA 10 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 6 30 hFE-2 DC Current Gain IC= 4.5A; VCE= 5V 2.25 COB Output Capacitance IE= 0; VCB= 10V; ftest= ...

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