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Inchange Semiconductor |
2SB1217 ss otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB=B -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB=B -0.15A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitt |
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Inchange Semiconductor |
Silicon PNP Power Transistor PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -150mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -150mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown |
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Inchange Semiconductor |
Silicon PNP Power Transistor Emitter breakdown voltage IC=-1mA -160 V BVEBO Emitter-Base breakdown voltage IE=-50uA -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -100mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IE |
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Inchange Semiconductor |
Silicon PNP Power Transistor OL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -200mA VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -200mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakd |
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Inchange Semiconductor |
Silicon PNP Power Transistor tter Saturation Voltage IC= -2A; IB= -100mA VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -100mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Bas |
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Inchange Semiconductor |
Silicon PNP Power Transistor mitter Saturation Voltage IC= -1A; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -50mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Bas |
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Inchange Semiconductor |
Triacs ·With TO-220AB non insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in l |
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Inchange Semiconductor |
Silicon NPN Power Transistor Voltage IC= -1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -100μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A ICBO Collector Cutoff Current |
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Inchange Semiconductor |
Silicon PNP Power Transistor rwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cuto |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D |
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Inchange Semiconductor |
Silicon PNP Power Transistor unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(B |
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Inchange Semiconductor |
Silicon PNP Power Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -150mA VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -150mA V(BR)CBO Collector-Base Breakdown |
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Inchange Semiconductor |
Silicon PNP Power Transistor tter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(sat) Base-Emitter Sa |
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Desde 2024. D4U Semiconductor.
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