2SB1261-K Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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2SB1261-K

Inchange Semiconductor
2SB1261-K
2SB1261-K 2SB1261-K
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Part Number 2SB1261-K
Manufacturer Inchange Semiconductor
Description ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI...
Features Voltage IC= -1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -100μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE1 DC Current Gain IC= -0.2A; VCE= -2V hFE DC Current Gain IC= -0.6A; VCE= -2V hFE DC Current Gain IC= -2A; VCE= -2V 2SB1261-K MIN TYP. MAX UNIT -60 V -60 V -7 V -0.3 V -1.2 V -10 μA -10 μA 60 200 400 50 NOTICE: ISC reserves the rights to make changes of ...

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