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Inchange Semiconductor |
2SC2026 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 25 200 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 15 2.0 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.75 1.1 pF Gpe Power Gain VCE= 10 V,IC= 10mA; |
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Inchange Semiconductor |
2SC5803 IC= 8A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1.0 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= |
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Inchange Semiconductor |
Silicon NPN Transistor O(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A ICBO Collector Cutoff Current VCB=800V; IE= 0 ICES Col |
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Inchange Semiconductor |
Silicon NPN Power Transistor Voltage IC= 100mA ; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ; IB= 10mA ICBO Emitter Cutoff Current VCB= 60V; IE= 0 IEBO Collector Cutoff Current VEB= 5V; IC= 0 hFE(1) DC Current Gain IC= 2mA ; VCE= 6V hFE(2) DC Curren |
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Inchange Semiconductor |
Silicon NPN Power Transistors S TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 V |
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Inchange Semiconductor |
Silicon NPN Power Transistor ector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB=2.4A VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB=2.4A ICBO Collector Cutoff |
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Inchange Semiconductor |
Power Transistor 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC |
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Inchange Semiconductor |
Silicon NPN Power Transistor NGE Semiconductor 2SC1970 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)EBO |
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Inchange Semiconductor |
Silicon NPN Power Transistors ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage |
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Inchange Semiconductor |
Silicon NPN Transistor unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-Emitter Voltage IC=1mA ; RBE=∞ 42 58 V VCBO Collector-Emitter Sustaining Voltage IC= 0.1mA ;I 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= |
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Inchange Semiconductor |
2SC4148 tor-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At |
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Inchange Semiconductor |
Silicon NPN Transistor BO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 10V;f= |
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Inchange Semiconductor |
Silicon NPN RF Transistor BO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S |
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Inchange Semiconductor |
2SC1827 or-base breakdown voltage IC=0.1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A ICBO Collector cut-off current VC |
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Inchange Semiconductor |
Silicon NPN Power Transistor IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V 2SC3883 MIN MAX UNIT 800 V 5.0 V 1.5 |
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Inchange Semiconductor Company |
2SC2310 tion voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A |
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Inchange Semiconductor |
Silicon NPN RF Transistor ollector Cutoff Current VCB= 25V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 20 V 0.1 μA 1.0 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 40 300 Cre Reverse Transfer Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz fT Current-Gain—Bandwidt |
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Inchange Semiconductor |
Silicon NPN Power Transistor ctor-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=16A; IB= 3.2A VBE(sat) Base-Emitter Saturation Voltage IC= 16A; IB= 3.2A ICBO Collector Cutoff |
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Inchange Semiconductor |
Silicon NPN RF Transistor age IC= 20mA ; IB= 4mA ICBO Collector Cutoff Current VCB= 10V; IE= 0 10 V 0.5 V 1 μA hFE DC Current Gain IC= 5mA ; VCE= 4V 75 400 fT Current-Gain—Bandwidth Product IE= -5mA ; VCB= 4V; f= 200MHz 1.4 1.9 2.5 GHz COB Output Capacitance IE= 0 |
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Inchange Semiconductor |
2SC3694 tor-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current |
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Desde 2024. D4U Semiconductor.
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