Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC3085 |
| Part Number | 2SC3085 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Breakdown Voltage- : V(BR)CBO= 500V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU. |
| Features | ctor-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=16A; IB= 3.2A VBE(sat) Base-Emitter Saturation Voltage IC= 16A; IB= 3.2A ICBO Collector Cutoff Current VCB= 400V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 3.2A; VCE= 5V hFE-2 DC Current Gain IC= 16A; VCE. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3082K |
ROHM |
NPN Silicon Transistor |
|
| 2 | 2SC3083 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC3083 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3083 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3086 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC3086 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3086 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC3087 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 9 | 2SC3087 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3087 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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